Method, device and system for non-destructive detection of defects in a semiconductor die
US11346818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Oct 24, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2291/2697
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.