Wafer annealing method
US11348781B2 · kind B2 · utility
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1References
9Claims
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Key dates
| Filing date | Jul 10, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Aug 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a wafer annealing method, including: preparing a wafer, the wafer includes a plurality of regions concentrically disposed on the wafer; heating the plurality of regions, the heating process includes a plurality of heating stages, each of the heating stages has a different heating rate, temperatures of the plurality of regions vary in each of the heating stages; performing heat preservation on the plurality of regions; and cooling the plurality of regions through blowing nitrogen. The wafer annealing method can improve the electrical uniformity of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.