Method for forming a superjunction transistor device
US11348838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Aug 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/415
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor device and a method for forming a transistor device are disclosed. The method includes: forming first regions of a first doping type and second regions of a second doping type in inner and edge regions of a semiconductor body; and forming body and source regions of transistor cells in the inner region. Forming the first and second regions includes: forming first and second implanted regions in the inner and edge regions, each first implanted region including at least dopant atoms of a first doping type and each second implanted region including at least dopant atoms of a second doping type; and diffusing the dopant atoms of both doping types in a thermal process such that dopant atoms of at least one of the first and second doping types have at least one of different diffusion rates and diffusion lengths in the inner and edge regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.