Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication
US11348970B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Apr 23, 2018 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Oct 1, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y25/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.