Benjamin Buford
16Patents
2h-index
26Co-inventors
46Inventor score
Filing activity: Apr 23, 2018 → Jun 13, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11374164B2 | Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory | Electricity | 2 | Active |
| US11276730B2 | Spin orbit torque memory devices and methods of fabrication | Electricity | 2 | Active |
| US12009018B2 | Transition metal dichalcogenide based spin orbit torque memory device | Electricity | 1 | Active |
| US11367749B2 | Spin orbit torque (SOT) memory devices and their methods of fabrication | Physics | 1 | Active |
| US11393515B2 | Transition metal dichalcogenide based spin orbit torque memory device | Electricity | 1 | Active |
| US11062752B2 | Spin orbit torque memory devices and methods of fabrication | Electricity | 1 | Active |
| US11476412B2 | Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory | Electricity | 1 | Active |
| US11245068B2 | Transition metal dichalcogenide based magnetoelectric memory device | Electricity | 1 | Active |
| US11594673B2 | Two terminal spin orbit memory devices and methods of fabrication | Electricity | 0 | Active |
| US11683939B2 | Spin orbit memory devices with dual electrodes, and methods of fabrication | Electricity | 0 | Active |
| US11508903B2 | Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance | Electricity | 0 | Active |
| US11348970B2 | Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication | Performing Operations; Transporting | 0 | Active |
| US11626451B2 | Magnetic memory device with ruthenium diffusion barrier | Electricity | 0 | Active |
| US11696514B2 | Transition metal dichalcogenide based magnetoelectric memory device | Electricity | 0 | Active |
| US11502188B2 | Apparatus and method for boosting signal in magnetoelectric spin orbit logic | Electricity | 0 | Active |
| US11476408B2 | Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.