Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof

US11349002B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ta-Chun Lin · Hsinchu, TW
• Kuan-Lin Yeh · Hsinchu, TW
• Chun-Jun Lin · Hsinchu, TW
• Kuo-Hua Pan · Hsinchu, TW
• Mu-Chi Chiang · Baoshan, TW
• Jhon Jhy Liaw · Shanggongguan, TW

Key dates

• Filing date: Sep 25, 2020
• Grant date: May 31, 2022
• Expiry date: Sep 25, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/017
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.