Chun-Jun Lin
14Patents
3h-index
12Co-inventors
57Inventor score
Filing activity: Jan 24, 2002 → Jul 19, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6942320B2 | Integrated micro-droplet generator | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6951622B2 | Method for fabricating an integrated nozzle plate and multi-level micro-fluidic devices fabricated | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7011392B2 | Integrated inkjet print head with rapid ink refill mechanism and off-shooter heater | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7240433B2 | Method of fabricating a thermal inkjet head having a symmetrical heater | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7252776B2 | Method for fabricating a thermal bubble inkjet print head with rapid ink refill mechanism and off-shooter heater | Emerging Cross-Sectional Technologies | 1 | Expired |
| US11315924B2 | Isolation structure for preventing unintentional merging of epitaxially grown source/drain | Electricity | 0 | Active |
| US12336282B2 | Semiconductor device having different source/drain junction depths and fabrication method thereof | Electricity | 0 | Active |
| US12317567B2 | Semiconductor device structure and method for forming the same | Electricity | 0 | Active |
| US12414355B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US12300698B2 | Isolation structure for preventing unintentional merging of epitaxially grown source/drain | Electricity | 0 | Active |
| US11349002B2 | Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof | Electricity | 0 | Active |
| US11749683B2 | Isolation structure for preventing unintentional merging of epitaxially grown source/drain | Electricity | 0 | Active |
| US11990525B2 | Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof | Electricity | 0 | Active |
| US12205849B2 | Semiconductor device structure with source/drain structure and method for forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.