Method for manufacturing tilted mesa and method for manufacturing detector

US11349043B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Xingye Zhou · Shijiazhuang, CN
• Zhihong Feng · Shijiazhuang, CN
• Yuanjie Lv · Shijiazhuang, CN
• Xin Tan · Beijing, CN
• Xubo Song · Shijiazhuang, CN
• Jia Li · Shijiazhuang, CN
• Yulong Fang · Shijiazhuang, CN
• Yuangang Wang · Nanhu, CN

Key dates

• Filing date: Sep 24, 2020
• Grant date: May 31, 2022
• Expiry date: Sep 24, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/306

Abstract

The disclosure is related to the technical field of semiconductors, and provides a method for manufacturing a tilted mesa and a method for manufacturing a detector. The method for manufacturing a tilted mesa comprises: coating a photoresist layer on a mesa region of a chip; heating the chip on which the photoresist layer is coated from a first preset temperature to a second preset temperature; performing etching processing on the heated chip, so as to manufacture a mesa having a preset tilting angle; and removing the photoresist layer on the mesa region of the chip after the mesa is manufactured.