Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuit
US11349304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Oct 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/041
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide a circuit structure and method to control electrostatic discharge (ESD) events in a resistor-capacitor (RC) circuit. Circuit structures according to the disclosure may include a trigger transistor coupled in parallel with the RC circuit, and a gate terminal coupled to part of the RC circuit. A mirror transistor coupled in parallel with the RC circuit transmits a current that is less than a current through the trigger transistor. A snapback device has a gate terminal coupled to a source or drain of the mirror transistor, and a pair of anode/cathode terminals coupled in parallel with the RC circuit. A current at the gate terminal of the snapback device, derived from current in the mirror transistor, controls an anode/cathode current flow in the snapback device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.