Heat shield structure for single crystal production furnace and single crystal production furnace

US11352713B2 · kind B2 · utility

Assignees

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN
• Zing Semiconductor Corporation · CN

Inventors

• Zhongying Xue · Shanghai, CN
• Tao Wei · London, GB
• Xing Wei · Xi'an, CN
• ZHAN-YANG LI · Nanhu, CN
• Yun Liu · Shanghai, CN
• Minghao LI · Hefei, CN

Key dates

• Filing date: Dec 31, 2020
• Grant date: Jun 7, 2022
• Expiry date: Feb 6, 2041

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/06
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed a heat shield structure for a single crystal production furnace, which is provided above a melt crucible of a single crystal production furnace and comprises an outer housing and a heat insulation plate disposed within the outer housing. A bottom outer surface of the outer housing faces an interior of the melt crucible, and an angle formed between a plane in which the heat insulation plate is located and a plane in which a bottom of the outer housing is located is an acute angle and faces an outer surface of single crystal silicon. The heat shield design is changed, a heat absorbing plate is additionally provided for transferring heat absorbed to the single crystal silicon, a heat channel is formed in the heat shield, so that a pulling rate is controlled, which improves radial mass uniformity of the single crystal silicon.