Thin film transistor and manufacturing method thereof and electronic device
US11355647B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 17, 2018 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | May 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.