Memory device

US11355702B2 · kind B2 · utility

Assignees

• STMicroelectronics SA
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Paolo Cappelletti · Seveso, IT
• Gabriele Navarro · Moirans, FR

Key dates

• Filing date: Aug 6, 2019
• Grant date: Jun 7, 2022
• Expiry date: Feb 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.