Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more
US11359306B2 · kind B2 · utility
1Cited by
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3Claims
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Key dates
| Filing date | May 22, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Sep 3, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.