Conformal titanium nitride-based thin films and methods of forming same
US11361992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2019 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Dec 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.