Power semiconductor module embedded in a mold compounded with an opening
US11362008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Jan 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/4006
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a power semiconductor module, including a substrate having an electric insulating main layer being provided with a structured top metallization and with a bottom metallization, wherein the top metallization is provided with at least one power semiconductor device and at least one contact area, wherein the main layer together with its top metallization and the at least one power semiconductor device is embedded in a mold compound such that the mold compound includes at least one opening for contacting the at least one contact area, and wherein power semiconductor module includes a housing with circumferential side walls, wherein the side walls are positioned above the main layer of the substrate so that the side walls are only present in a space above a plane through the main layer of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.