Non-volatile memory device and method for manufacturing the same
US11362186B2 · kind B2 · utility
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3References
13Claims
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Key dates
| Filing date | Mar 27, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Mar 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A non-volatile memory device is provided. The non-volatile memory device includes a substrate, a first gate structure disposed on the substrate, a second gate structure disposed on the substrate, and a memory gate structure disposed on the substrate and between the first gate structure and the second gate structure. The memory gate structure at least covers the first gate structure and the second gate structure. The memory gate structure includes a charge storage layer disposed on the substrate and a memory gate layer disposed on the charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.