Patent · US Active

High-efficiency red micro-LED with localized current aperture

US11362237B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

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Key dates

Filing dateJun 2, 2020
Grant dateJun 14, 2022
Priority date
Expiry dateSep 24, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.