High-efficiency red micro-LED with localized current aperture
US11362237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2020 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Sep 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.