Patent · US Active

Magnetoresistive devices and methods for forming the same

US11366182B2 · kind B2 · utility

0Cited by
3References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 24, 2020
Grant dateJun 21, 2022
Priority date
Expiry dateSep 10, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N59/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.