Structures for radiofrequency applications and related methods
US11367650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2020 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Dec 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76264
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.