Semiconductor device having deep trench structure and method of manufacturing thereof
US11367661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2020 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Nov 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes etch stop films formed on the first gate electrode, the first source region, the first drain region, and the shallow trench isolation regions, respectively. First interlayer insulating films are formed on the etch stop film, respectively. Deep trenches are formed in the substrate between adjacent ones of the first interlayer insulating films to overlap the shallow trench isolation regions. Sidewall insulating films are formed in the deep trenches, respectively. A gap-fill insulating film is formed on the sidewall insulating film. A second interlayer insulating film is formed on the gap-fill insulating film. A top surface of the second interlayer insulating film is substantially planar and a bottom surface of the second interlayer insulating film is undulating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.