Patent · US Active

Silicon carbide device and method for forming a silicon carbide device

US11367683B2 · kind B2 · utility

0Cited by

5References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Edward Fuergut · Nuremberg, DE
Ravi Keshav Joshi · Klagenfurt, AT
Ralf Siemieniec · Villach, AT
Thomas Basler · Riemerling, DE
Martin Gruber · Schwandorf, DE
Jochen Hilsenbeck · Villach, AT
Dethard Peters · Edenkoben, DE
Roland Rupp · Achern, DE
Wolfgang Scholz · Minden, DE

Key dates

Filing date	Jun 26, 2019
Grant date	Jun 21, 2022
Priority date	—
Expiry date	Jul 7, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/141
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A silicon carbide device includes a silicon carbide substrate, a contact layer including nickel, silicon and aluminum, a barrier layer structure including titanium and tungsten, and a metallization layer including copper. The contact layer is located on the silicon carbide substrate. The contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure. The barrier layer structure is located between the silicon carbide substrate and the metallization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.