Adaptive thermal overshoot and current limiting protection for MOSFETs
US11367719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2020 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Dec 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.