MOSFET device structure with air-gaps in spacer and methods for forming the same
US11367778B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2020 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Mar 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor device and method of making the same are disclosed. The transistor device includes one or more air gaps in one or more sidewall spacers. The one or more air gaps may be located adjacent the gate and/or above the source or drain regions of the device. Various embodiments may include different combinations of air gaps formed in one or both sidewall spacers. Various embodiments may include air gaps formed in one or both sidewall spacers adjacent to the gate and/or above the source or drain regions of the device. The formation of the air gaps may reduce unwanted parasitic and/or fringing capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.