Phase-shift mask for extreme ultraviolet lithography
US11372323B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 10, 2020 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Mar 10, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/52
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.