Patent · US Active

Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate

US11373863B2 · kind B2 · utility

1Cited by

0References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roland Rupp · Achern, DE
Mihai Draghici · Villach, AT
Tobias Franz Wolfgang Hoechbauer · Villach, AT
Wolfgang Lehnert · Lintach, DE
Matteo Piccin · Villach, AT

Key dates

Filing date	May 7, 2020
Grant date	Jun 28, 2022
Priority date	—
Expiry date	May 7, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2021/60112
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.