Interconnect structure having metal layers enclosing a dielectric
US11373949B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 6, 2020 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Apr 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures are provided. An interconnect structure includes a substrate; a first dielectric layer on the substrate and including an opening for a first interconnect layer extending to the substrate; a first metal layer having a first portion in the opening and a second portion in contact with the first portion and on a portion of the first dielectric layer adjacent to the opening; a second dielectric layer on the first dielectric layer and on the first metal layer, the second dielectric layer including a trench for a second interconnect layer, the trench exposing the second portion of the first metal layer; and a second metal layer in the trench, wherein the second portion of the first metal layer forms a lower portion of the second interconnect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.