Germanium photodetector embedded in a multi-mode interferometer
US11378750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Jan 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes etching a silicon layer to form a silicon slab and an upper silicon region over the silicon slab, and implanting the silicon slab and the upper silicon region to form a p-type region, an n-type region, and an intrinsic region between the p-type region and the n-type region. The method further includes etching the p-type region, the n-type region, and the intrinsic region to form a trench. The remaining portions of the upper silicon region form a Multi-Mode Interferometer (MMI) region. An epitaxy process is performed to grow a germanium region in the trench. Electrical connections are made to connect to the p-type region and the n-type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.