Plasma processing method and plasma processing apparatus
US11380547B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Oct 30, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Oct 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.