Patent · US Active

Cutting method

US11380586B2 · kind B2 · utility

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12Claims
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Key dates

Filing dateJul 18, 2018
Grant dateJul 5, 2022
Priority date
Expiry dateDec 6, 2038

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB23K26/53
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of the workpiece. After the first dry etching process, a first pressure-reducing process is performed in which the workpiece is placed under an atmosphere of reduced pressure as compared to pressure during the first dry etching process. After the first pressure-reducing process, a second dry etching process is performed from the front surface toward the rear surface of the workpiece.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.