Patent · US Active

Repurposed seed layer for high frequency noise control and electrostatic discharge connection

US11380613B2 · kind B2 · utility

0Cited by

0References

12Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Yue Li · San Diego, US
Li-Sheng Weng · San Diego, US
Yangyang SUN · Qingdao, CN

Key dates

Filing date	May 29, 2020
Grant date	Jul 5, 2022
Priority date	—
Expiry date	Jun 20, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/151
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit (IC) package is described. The IC package includes a die, having a pad layer structure on back-end-of-line layers on a substrate. The die also includes a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer. The IC package also includes a patterned seed layer on a surface of the die to contact the first under bump metallization layer. The IC package further includes a first package bump on the first under bump metallization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.