Charge release layer to remove charge carriers from dielectric grid structures in image sensors

US11380728B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ching-Chung Su · Tainan, TW
• Jiech-Fun Lu · 巷口, TW

Key dates

• Filing date: Sep 16, 2020
• Grant date: Jul 5, 2022
• Expiry date: Sep 16, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

Various embodiments of the present disclosure are directed towards a method for manufacturing a semiconductor structure. The method includes forming photodetectors within a semiconductor substrate. A charge release layer is deposited over the semiconductor substrate. A conductive contact is formed over the charge release layer such that a contact protrusion of the conductive contact extends through the charge release layer. The charge release layer is disposed along opposing sidewalls of the conductive contact. The charge release layer is electrically coupled to ground via the conductive contact.