Contact structures for n-type diamond

US11380763B2 · kind B2 · utility

Assignee

• ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY · US

Inventors

• Franz A. Koeck · Kulm am Zirbitz, AT
• Robert J. Nemanich · Cary, US

Key dates

• Filing date: Apr 28, 2020
• Grant date: Jul 5, 2022
• Expiry date: Apr 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.