Patent · US Active

Magnetic memory devices with layered electrodes and methods of fabrication

US11380838B2 · kind B2 · utility

0Cited by

1References

22Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Justin S. Brockman · Portland, US
Conor P. Puls · Portland, US
Stephen Wu · Portland, US
Christopher J. Wiegand · Portland, US
Tofizur Rahman · Portland, US
Daniel G. Ouellette · Portland, US
Angeline Smith · Hillsboro, US
Andrew L. Smith · Needham, US
Pedro Quintero · Beaverton, US
Juan G. Alzate-Vinasco · Tigard, US
Oleg Golonzka · Beaverton, US

Key dates

Filing date	Jun 29, 2018
Grant date	Jul 5, 2022
Priority date	—
Expiry date	Nov 5, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.