Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
US11386320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2019 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Oct 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic double tunnel junction (MDTJ) (which, preferably, has a large aspect ratio, wherein length L of the MDTJ>>width w of the MDTJ) has magnetic domain wall(s) or DW(s) in the free layer of the MDTJ, wherein controlled movement of the DW(s) across the free layer is effected in response to the polarity, magnitude, and duration of a voltage pulse across the MDTJ. The motion and relative position of DW(s) causes the conductance of the MDTJ (that is measured across the MDTJ) to change in a symmetric and linear fashion. By reversing the polarity of the bias voltage, the creation and/or direction of the DW(s) motion can be reversed, thereby allowing for a bi-directional response to the input pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.