Patent · US Active

Method for manufacturing a mixed substrate

US11387100B2 · kind B2 · utility

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20Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Heimanu Niebojewski · Grenoble, FR

Key dates

Filing date	Sep 10, 2020
Grant date	Jul 12, 2022
Priority date	—
Expiry date	Oct 8, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/762
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a mixed substrate having, on a main face of a support substrate, a first region and a second region, includes a) providing a starting substrate which comprises an intermediate layer, consisting of the second material, and the support substrate; b) forming a mask which comprises an aperture delimiting the first region; c) forming a cavity; and d) forming the first region by epitaxially growing the first material in a single crystal form in the cavity The method includes step c1), performed before step d), of forming a protective layer, made of an amorphous material, overlaying the flank of the cavity and leaving the bottom of said cavity exposed to the external environment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.