Inventor · Grenoble, FR

Heimanu Niebojewski

17Patents
3h-index
22Co-inventors
56Inventor score

Filing activity: Apr 26, 2013 → Sep 30, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10236215B1 Methods of forming gate contact structures and cross-coupled contact structures for transistor devices Electricity 13 Active
US9117805B2 Air-spacer MOS transistor Electricity 12 Active
US10651284B2 Methods of forming gate contact structures and cross-coupled contact structures for transistor devices Electricity 4 Active
US10790148B2 Method to increase effective gate height Electricity 3 Active
US8962399B2 Method of making a semiconductor layer having at least two different thicknesses Electricity 2 Active
US12002869B2 Gate contact structures and cross-coupled contact structures for transistor devices Electricity 2 Active
US11646196B2 Method for germanium enrichment around the channel of a transistor Electricity 0 Active
US10490455B2 Gate contact structures and cross-coupled contact structures for transistor devices Electricity 0 Active
US11631609B2 Method for manufacturing a microelectronic device Electricity 0 Active
US12376350B2 Method for manufacturing a quantum electronic circuit Physics 0 Active
US8822332B2 Method for forming gate, source, and drain contacts on a MOS transistor Electricity 0 Active
US11387100B2 Method for manufacturing a mixed substrate Electricity 0 Active
US9831319B2 Transistor with MIS connections and fabricating process Electricity 0 Active
US9978602B2 Method of making a transistor Electricity 0 Active
US8980702B2 Method of making a transistor Electricity 0 Active
US9240325B2 Method for making an integrated circuit Electricity 0 Active
US11469309B2 Gate contact structures and cross-coupled contact structures for transistor devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.