Method of manufacturing semiconductor device
US11387139B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2020 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Sep 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, the method including: a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers; a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film; and a desorbing process of desorbing and diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.