Patent · US Active

Memory cell and methods thereof

US11387254B2 · kind B2 · utility

4Cited by

7References

20Claims

0Family size

Assignee

Ferroelectric Memory GmbH · DE

Inventor

Marko Noack · Dresden, DE

Key dates

Filing date	Oct 30, 2020
Grant date	Jul 12, 2022
Priority date	—
Expiry date	Feb 3, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/62
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

According to various aspects, a memory cell comprise: a first terminal, a second terminal, a third terminal, a fourth terminal, and a fifth terminal to control the memory cell; a first memory element (FeFET1) and a second memory element (FeFET2), the first memory element comprising a first capacitive memory structure electrically connected to the first terminal and a first field-effect transistor structure coupled to the first capacitive memory structure and electrically connected to the third terminal and the forth terminal; the second memory element comprising a second capacitive memory structure electrically connected to the second terminal and a second field-effect transistor structure coupled to the second capacitive memory structure and electrically connected to the third terminal and the fifth terminal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.