Semiconductor fin structure and method of fabricating the same

US11387350B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Geert Eneman · Heverlee, BE
• Bartlomiej Jan Pawlak · Leuven, BE
• Liesbeth Witters · Linden, BE
• Geoffrey Pourtois · Villers-la-Ville, BE

Key dates

• Filing date: Dec 18, 2019
• Grant date: Jul 12, 2022
• Expiry date: Dec 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

According to one aspect, a method of fabricating a semiconductor structure includes cutting a semiconductor fin extending along a substrate. Cutting the semiconductor fin can comprise forming a fin cut mask. The fin cut mask can define a number of masked regions and a number of cut regions. The method can include cutting the fin into a number of fin parts by etching the fin in the cut regions. The method can further comprise forming an epitaxial semiconductor capping layer on the fin prior to forming the fin cut mask or on the fin parts subsequent to cutting the fin. A capping layer material and a fin material can be lattice mismatched. According to another aspect, a corresponding semiconductor structure comprises fin parts.