Patent · US Active

Integrated hall sensor device and method for measuring a magnetic field by means of an integrated hall sensor device

US11391558B2 · kind B2 · utility

0Cited by
3References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 12, 2020
Grant dateJul 19, 2022
Priority date
Expiry dateNov 5, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/077
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An integrated Hall sensor device for measuring a magnetic field is provided. The integrated Hall sensor device includes: a semiconductor chip; a first Hall sensor for generating a first magnetic field measurement signal dependent on a first component; a second Hall sensor for generating a second magnetic field measurement signal dependent on a second component of the magnetic field; a first stress sensor for generating a shear stress measurement signal dependent on mechanical stresses in the semiconductor chip; and an evaluation device for determining one or more properties of the magnetic field depending on the first magnetic field measurement signal, the second magnetic field measurement signal. and the first shear stress measurement signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.