Field-effect transistor-based biosensor
US11391692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2019 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Aug 22, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y15/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor is provided, the sensor including a field effect transistor comprising: (a) an active region comprising: (i) a source region and a drain region defining a source-drain axis and (ii) a channel region between the source region and the drain region; (b) a dielectric region on the channel region, comprising at least a first zone on a first portion of the channel region and a second zone on a second portion of the channel region, the first zone measuring from 1 to 100 nm in the direction of the source-drain axis and being adapted to create a different threshold voltage for the first portion of the channel region than for the second portion of the channel region, and (c) a fluidic gate region to which a top surface of the dielectric region is exposed. A biosensing device comprising such a sensor, a method for using such a sensor, and a process for making such a sensor are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.