Geert Hellings
17Patents
4h-index
22Co-inventors
56Inventor score
Filing activity: May 8, 2009 → Nov 16, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8119488B2 | Scalable quantum well device and method for manufacturing the same | Electricity | 9 | Active |
| US9006705B2 | Device with strained layer for quantum well confinement and method for manufacturing thereof | Electricity | 5 | Active |
| US7915608B2 | Scalable quantum well device and method for manufacturing the same | Electricity | 4 | Active |
| US9029217B1 | Band engineered semiconductor device and method for manufacturing thereof | Electricity | 4 | Active |
| US10469083B2 | Breakdown-based physical unclonable function | Electricity | 3 | Active |
| US9391060B2 | Electrostatic discharge protection | Electricity | 3 | Active |
| US9263401B2 | Semiconductor device comprising a diode and a method for producing such a device | Electricity | 2 | Active |
| US10566434B2 | Co-fabricated gate-all-around field effect transistor and fin field effect transistor | Electricity | 1 | Active |
| US8963225B2 | Band engineered semiconductor device and method for manufacturing thereof | Electricity | 1 | Active |
| US8912055B2 | Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby | Electricity | 0 | Active |
| US11114435B2 | FinFET having locally higher fin-to-fin pitch | Electricity | 0 | Active |
| US8698129B2 | Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistor | Electricity | 0 | Active |
| US9847336B2 | Method of forming a junction field effect transistor | Electricity | 0 | Active |
| US11735645B2 | Method for forming a bioFET sensor including semiconductor fin or nanowire | Physics | 0 | Active |
| US11391692B2 | Field-effect transistor-based biosensor | Performing Operations; Transporting | 0 | Active |
| US9159860B2 | Avalanche photodetector element | Emerging Cross-Sectional Technologies | 0 | Active |
| US10680098B2 | High voltage tolerant LDMOS | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.