Extreme ultraviolet lithography method, extreme ultraviolet mask and formation method thereof
US11392022B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Jun 12, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Nov 24, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/48
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.