Memory cell arrangement and methods thereof

US11393518B1 · kind B1 · utility

Assignee

• Ferroelectric Memory GmbH · DE

Inventor

• Johannes Ocker · Dresden, DE

Key dates

• Filing date: Jun 8, 2021
• Grant date: Jul 19, 2022
• Expiry date: Jun 8, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/2295
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Various aspects relate to a memory cell arrangement including: a plurality of spontaneous-polarizable memory cells; and a control circuit configured to cause a writing of one or more first memory cells by a writing operation, wherein the writing operation includes: supplying a write signal set to the plurality of spontaneous-polarizable memory cells to provide a write voltage drop at each of the one or more first memory cells to switch a respective polarization state, the write signal set causing a disturb voltage drop at one or more second memory cells that are not intended to be written, wherein the disturb voltage drop causes a disturb of the one or more second memory cells and maintains a respective polarization state; and wherein the control circuit is further configured to supply a counter-disturb signal set to the plurality of spontaneous-polarizable memory cells, wherein the counter-disturb signal set provides a counter-disturb voltage drop at the one or more second memory cells to at least partially compensate the disturb caused by the write signal set.