Patent · US Active

Substrate placing table, plasma processing apparatus provided with same, and plasma processing method

US11393664B2 · kind B2 · utility

0Cited by
1References
6Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 9, 2019
Grant dateJul 19, 2022
Priority date
Expiry dateJun 11, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein. A focus ring (64) disposed outside the upper disk part (61a) in a radial direction of the upper disk part (61a) and covering an upper surface of the lower disk part (61b), an upper annular cover (65) for thermal insulation enclosing the lower disk part (61b) and at least a part of the cooling jacket (62), and a lower annular cover (66) for thermal insulation clamping the cooling jacket (62) between itself and the upper annular cover (65) are made of ceramics.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.