Patent · US Active

Physical vapor deposition (PVD) chamber with reduced arcing

US11393665B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Chao Du · Sunnyvale, US
Yong Cao · Goleta, US
Chen Gong · Nanjing, CN
Mingdong Li · Santa Clara, US
Fuhong Zhang · San Jose, US
Rongjun Wang · Dublin, US
Xianmin Tang · San Jose, US

Key dates

Filing date	Feb 25, 2019
Grant date	Jul 19, 2022
Priority date	—
Expiry date	Jul 5, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/332
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.