Semiconductor structure and fabrication method thereof

US11393685B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Bo SU · Shanghai, CN
• Shiliang JI · Shanghai, CN
• Erhu Zheng · Shanghai, CN
• Yan Wang · Shanghai, CN
• Haiyang Zhang · Shanghai, CN

Key dates

• Filing date: Sep 23, 2020
• Grant date: Jul 19, 2022
• Expiry date: Sep 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides a method for forming a semiconductor structure. The method includes providing a to-be-etched layer; forming a plurality of initial sidewall spacers on the to-be-etched layer; and performing at least one modification treatment process on the plurality of initial sidewall spacers to form a plurality of sidewall spacers. Each of the at least one modification treatment process includes modifying the plurality of initial sidewall spacers to form a transition layer on the top and sidewall surfaces of each initial sidewall spacer of the plurality of initial sidewall spacers, and then removing the transition layer.