Silicon on insulator structure and method of making the same
US11393712B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 3, 2021 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of making a silicon on insulator (SOI) structure, comprising steps of: providing a bonded structure, the bonded structure comprises a first substrate, a second substrate and an insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a SOI structure; and processing the SOI structure with isothermal annealing technology at a pressure which is lower than atmospheric pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.