Method of manufacturing a semiconductor device having an integrated pn diode temperature sensor
US11393736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2019 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Sep 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: forming one or more transistor cells in a first region of a semiconductor substrate, the semiconductor substrate having a second region that is devoid of transistor cells; forming a first dielectric material over the first and second regions; forming a second dielectric material over the first dielectric material; forming a pn diode in the first dielectric material over the second region; etching first contact grooves into a p-type region of the pn diode, second contact grooves into an n-type region of the pn diode, and third contact grooves into the first region of the semiconductor substrate at the same time using a common contact formation process; and filling the first contact grooves, the second contact grooves and the third contact grooves with an electrically conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.