Bonding method for semiconductor substrate, and bonded semiconductor substrate
US11393772B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Jun 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a bonding method for a semiconductor substrate, which may improve flatness of a bonded substrate. The present disclosure further provides a bonded semiconductor substrate. The semiconductor substrate is thermally treated prior to bonding, and oxygen precipitates in the semiconductor substrate are partially or totally converted to interstitial oxygen atoms in the thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.